onsemi Dual 2 Type N-Channel Power MOSFET, 74 A, 80 V Enhancement, 8-Pin DFN NVMFD6H840NLWFT1G
- RS庫存編號:
- 195-2671
- 製造零件編號:
- NVMFD6H840NLWFT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 15 件）*
TWD1,123.50
(不含稅)
TWD1,179.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,170 件從 2026年6月29日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 360 | TWD74.90 | TWD1,123.50 |
| 375 - 735 | TWD73.00 | TWD1,095.00 |
| 750 + | TWD71.70 | TWD1,075.50 |
* 參考價格
- RS庫存編號:
- 195-2671
- 製造零件編號:
- NVMFD6H840NLWFT1G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | 175°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature 175°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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