onsemi NVTFS010N10MCL N-Channel MOSFET, 57.8 A, 100 V Enhancement, 8-Pin WDFN NVTFS010N10MCLTAG
- RS庫存編號:
- 195-2553
- 製造零件編號:
- NVTFS010N10MCLTAG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 1500 件）*
TWD37,800.00
(不含稅)
TWD39,690.00
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 4,500 件準備從其他地點送貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 1500 | TWD25.20 | TWD37,800.00 |
| 3000 + | TWD24.70 | TWD37,050.00 |
* 參考價格
- RS庫存編號:
- 195-2553
- 製造零件編號:
- NVTFS010N10MCLTAG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 57.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NVTFS010N10MCL | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 77.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Width | 3.15mm | |
| Height | 750μm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 57.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NVTFS010N10MCL | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 77.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Width 3.15mm | ||
Height 750μm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3x3 mm)
Compact Design
Low On-Resistance
Minimizes Conduction Losses
Low Capacitance
Minimize Driver Losses
PPAP Capable
Suitable for Automotive Applications
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
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