onsemi NVMJS2D5N06CL Type N-Channel MOSFET, 164 A, 60 V Enhancement, 8-Pin LFPAK NVMJS2D5N06CLTWG
- RS庫存編號:
- 195-2507
- 製造零件編號:
- NVMJS2D5N06CLTWG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
TWD1,014.00
(不含稅)
TWD1,064.80
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD50.70 | TWD1,014.00 |
| 760 - 1480 | TWD49.40 | TWD988.00 |
| 1500 + | TWD48.70 | TWD974.00 |
* 參考價格
- RS庫存編號:
- 195-2507
- 製造零件編號:
- NVMJS2D5N06CLTWG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMJS2D5N06CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMJS2D5N06CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
相關連結
- onsemi NVMJS2D5N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NTMYS014N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMJS1D6N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NTMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMJS1D4N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK