onsemi FDMS Type N-Channel MOSFET, 116 A, 80 V Enhancement, 8-Pin PQFN
- RS庫存編號:
- 195-2498
- 製造零件編號:
- FDMS4D5N08LC
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD140,700.00
(不含稅)
TWD147,720.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD46.90 | TWD140,700.00 |
| 6000 + | TWD45.40 | TWD136,200.00 |
* 參考價格
- RS庫存編號:
- 195-2498
- 製造零件編號:
- FDMS4D5N08LC
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | FDMS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 113.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 5.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series FDMS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 113.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 5.85mm | ||
Automotive Standard No | ||
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A
Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
Logic Level drive Capable
Application
This product is general usage and suitable for many different applications.
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