STMicroelectronics STD5N Type N-Channel MOSFET, 3.5 A, 600 V Enhancement, 3-Pin TO-252 STD5N60DM2
- RS庫存編號:
- 193-5390
- 製造零件編號:
- STD5N60DM2
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 包，共 25 件）*
TWD525.00
(不含稅)
TWD551.25
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月26日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD21.00 | TWD525.00 |
| 625 - 1225 | TWD20.50 | TWD512.50 |
| 1250 + | TWD20.10 | TWD502.50 |
* 參考價格
- RS庫存編號:
- 193-5390
- 製造零件編號:
- STD5N60DM2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | STD5N | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.55Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.2mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series STD5N | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.55Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.2mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
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