STMicroelectronics MDmesh M5 N-Channel MOSFET, 53 A, 300 V Enhancement, 3-Pin TO-263 STB45N30M5
- RS庫存編號:
- 192-4977
- 製造零件編號:
- STB45N30M5
- 製造商:
- STMicroelectronics
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TWD553.00
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TWD580.64
(含稅)
訂單超過 $1,300.00 免費送貨
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- 從 2027年1月11日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 248 | TWD276.50 | TWD553.00 |
| 250 - 498 | TWD270.50 | TWD541.00 |
| 500 + | TWD265.00 | TWD530.00 |
* 參考價格
- RS庫存編號:
- 192-4977
- 製造零件編號:
- STB45N30M5
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | TO-263 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.35mm | |
| Height | 4.37mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type TO-263 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 150°C | ||
Width 9.35mm | ||
Height 4.37mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
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