onsemi NTMJS1D6N06CL Type N-Channel MOSFET, 250 A, 60 V Enhancement, 8-Pin LFPAK
- RS庫存編號:
- 189-0260
- 製造零件編號:
- NTMJS1D6N06CLTWG
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD102,900.00
(不含稅)
TWD108,060.00
(含稅)
添加 3000 件 件可免費送貨
暫時缺貨
- 從 2026年8月18日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD34.30 | TWD102,900.00 |
| 6000 + | TWD33.70 | TWD101,100.00 |
* 參考價格
- RS庫存編號:
- 189-0260
- 製造零件編號:
- NTMJS1D6N06CLTWG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NTMJS1D6N06CL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Width | 4.9 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NTMJS1D6N06CL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Width 4.9 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb-Free
相關連結
- onsemi NTMJS1D6N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK NTMJS1D6N06CLTWG
- onsemi NTMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMJS1D4N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NVMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS014N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS014N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
