STMicroelectronics N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 188-8550P
- 製造零件編號:
- STD11N60DM2
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 625 件 (以卷裝提供)*
TWD50,375.00
(不含稅)
TWD52,893.75
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,105 個，準備發貨
單位 | 每單位 |
|---|---|
| 625 - 1245 | TWD80.60 |
| 1250 + | TWD79.20 |
* 參考價格
- RS庫存編號:
- 188-8550P
- 製造零件編號:
- STD11N60DM2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 420mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.17mm | |
| Width | 6.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 420mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.17mm | ||
Width 6.2mm | ||
Automotive Standard No | ||
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
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