STMicroelectronics Single STripFET 1 N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerFLAT STL40DN3LLH5
- RS庫存編號:
- 188-8491P
- 製造零件編號:
- STL40DN3LLH5
- 製造商:
- STMicroelectronics
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享受批量購買折扣
額外添加1500件可節省TWD900.00
查看批量定價選項小計 750 件 (以卷裝提供)*
TWD28,800.00
(不含稅)
TWD30,240.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月31日 發貨
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單位 | 每單位 | 節省 |
|---|---|---|
| 750 - 1490 | TWD38.40 | - |
| 1500 + | TWD37.80 | TWD900.00 |
* 參考價格
- RS庫存編號:
- 188-8491P
- 製造零件編號:
- STL40DN3LLH5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | STripFET | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.1mm | |
| Height | 0.95mm | |
| Length | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series STripFET | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.1mm | ||
Height 0.95mm | ||
Length 6.2mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Low on-resistance
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
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