STMicroelectronics STB11NM80 N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 188-8461P
- 製造零件編號:
- STB11NM80T4
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計 250 件 (以卷裝提供)*
TWD72,000.00
(不含稅)
TWD75,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月15日 發貨
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單位 | 每單位 |
|---|---|
| 250 - 498 | TWD288.00 |
| 500 + | TWD283.50 |
* 參考價格
- RS庫存編號:
- 188-8461P
- 製造零件編號:
- STB11NM80T4
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MDmesh Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STB11NM80 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 0.86V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.37mm | |
| Width | 9.35mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MDmesh Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STB11NM80 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 0.86V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 150°C | ||
Height 4.37mm | ||
Width 9.35mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)Qg in the industry
Applications
Switching applications
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