STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 188-8281
- 製造零件編號:
- STB12NM50T4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD63,600.00
(不含稅)
TWD66,780.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD63.60 | TWD63,600.00 |
| 5000 + | TWD62.30 | TWD62,300.00 |
* 參考價格
- RS庫存編號:
- 188-8281
- 製造零件編號:
- STB12NM50T4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | STP12NM50 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Width | 9.35 mm | |
| Height | 4.37mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series STP12NM50 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Width 9.35 mm | ||
Height 4.37mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Tight process control and high manufacturing yields
Low gate input resistance
Applications
Switching application
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