Vishay TrenchFET N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 SQD40020E_GE3
- RS庫存編號:
- 188-5048
- 製造零件編號:
- SQD40020E_GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD535.00
(不含稅)
TWD561.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 1,960 件從 2026年9月28日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 490 | TWD53.50 | TWD535.00 |
| 500 - 990 | TWD52.30 | TWD523.00 |
| 1000 + | TWD51.30 | TWD513.00 |
* 參考價格
- RS庫存編號:
- 188-5048
- 製造零件編號:
- SQD40020E_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.00233Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Width | 9.65mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.00233Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Width 9.65mm | ||
Standards/Approvals AEC-Q101 | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
TrenchFET® power MOSFET
Package with low thermal resistance
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