Vishay SQM40041EL Type N-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 SQM40041EL_GE3
- RS庫存編號:
- 188-5006
- 製造零件編號:
- SQM40041EL_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD513.00
(不含稅)
TWD538.65
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 605 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD102.60 | TWD513.00 |
| 200 - 395 | TWD100.20 | TWD501.00 |
| 400 + | TWD98.20 | TWD491.00 |
* 參考價格
- RS庫存編號:
- 188-5006
- 製造零件編號:
- SQM40041EL_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQM40041EL | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0034Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 288nC | |
| Maximum Power Dissipation Pd | 157W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Height | 4.57mm | |
| Width | 9.65 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQM40041EL | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0034Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 288nC | ||
Maximum Power Dissipation Pd 157W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Height 4.57mm | ||
Width 9.65 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Automotive P-Channel 40 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
Package with low thermal resistance
相關連結
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement TO-263 IPB120N04S402ATMA1
- Infineon iPB Type N-Channel MOSFET 120 V Enhancement TO-263
- Infineon IAUT Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 120 V Enhancement TO-263 IPB100N12S305ATMA1
- Infineon IAUT Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263 IAUT300N08S5N014ATMA1