Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3
- RS庫存編號:
- 188-4970
- 製造零件編號:
- SIHA100N60E-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD276.00
(不含稅)
TWD289.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD138.00 | TWD276.00 |
| 14 - 24 | TWD134.50 | TWD269.00 |
| 26 + | TWD132.50 | TWD265.00 |
* 參考價格
- RS庫存編號:
- 188-4970
- 製造零件編號:
- SIHA100N60E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Height | 15.3mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Height 15.3mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
E Series Power MOSFET.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
相關連結
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-220 SIHP065N60E-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-220
- Vishay SiHP052N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHP052N60EF-GE3
- Vishay SiHP068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHP068N60EF-GE3
- Vishay SiHA105N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHA105N60EF-GE3
