onsemi NVTFS6H854N N-Channel MOSFET, 44 A, 80 V Enhancement, 8-Pin WDFN NVTFS6H854NTAG
- RS庫存編號:
- 185-9264
- 製造零件編號:
- NVTFS6H854NTAG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD353.00
(不含稅)
TWD370.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 1,460 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 370 | TWD35.30 | TWD353.00 |
| 380 - 740 | TWD34.40 | TWD344.00 |
| 750 + | TWD33.80 | TWD338.00 |
* 參考價格
- RS庫存編號:
- 185-9264
- 製造零件編號:
- NVTFS6H854NTAG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | WDFN | |
| Series | NVTFS6H854N | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.15mm | |
| Height | 750μm | |
| Standards/Approvals | No | |
| Width | 3.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type WDFN | ||
Series NVTFS6H854N | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 3.15mm | ||
Height 750μm | ||
Standards/Approvals No | ||
Width 3.15mm | ||
Automotive Standard AEC-Q101 | ||
不相容
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3.3 x 3.3 mm)
Low On-Resistance
Low Capacitance
NVTFS6H850NWF − Wettable Flanks Product
PPAP Capable
Compact Design
Minimizes Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Suitable for Automotive Applications
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
相關連結
- onsemi NVTFS6H854N N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi NVT N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN FDMS86350
- onsemi UltraFET N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN FDMS3572
- onsemi PowerTrench N-Channel MOSFET 40 V Enhancement, 8-Pin WDFN FDMC8360L
- onsemi NVT N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN NVTFS6H888NLTAG
- onsemi NVTFS6H850N N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN NVTFS6H850NTAG