onsemi NVTFS6H854N Type N-Channel MOSFET, 44 A, 80 V Enhancement, 8-Pin WDFN NVTFS6H854NTAG
- RS庫存編號:
- 185-9264
- 製造零件編號:
- NVTFS6H854NTAG
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 10 件)*
TWD287.00
(不含稅)
TWD301.40
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,470 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 370 | TWD28.70 | TWD287.00 |
| 380 - 740 | TWD28.00 | TWD280.00 |
| 750 + | TWD27.50 | TWD275.00 |
* 參考價格
- RS庫存編號:
- 185-9264
- 製造零件編號:
- NVTFS6H854NTAG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | WDFN | |
| Series | NVTFS6H854N | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.75mm | |
| Length | 3.15mm | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type WDFN | ||
Series NVTFS6H854N | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 175°C | ||
Height 0.75mm | ||
Length 3.15mm | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
不相容
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3.3 x 3.3 mm)
Low On-Resistance
Low Capacitance
NVTFS6H850NWF − Wettable Flanks Product
PPAP Capable
Compact Design
Minimizes Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Suitable for Automotive Applications
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
相關連結
- onsemi NVTFS6H854N Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi NVTFS6H850N Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi NVTFS6H888N Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi NTTFS6H850N Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET 40 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi UltraFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
