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選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	477A
	Maximum Drain Source Voltage Vds	60V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	900μΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	294.6W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	225nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	8.1mm
	Width	8 mm
	Height	1.15mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 477A
	Maximum Drain Source Voltage Vds 60V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 900μΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 294.6W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 225nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 8.1mm
	Width 8 mm
	Height 1.15mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMTS0D7N06CLTXG

不相容

COO (Country of Origin):: PH

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (8x8 mm)

Low RDS(on)

Low QG and Capacitance

Wettable Flank Option

PPAP Capable

Compact Design

Minimize Conduction Losses

Minimize Driver Losses

Enhanced Optical Inspection

Applications

Reverser Battery protection

Switching power supplies

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

End Products

Motor Control – EPS, Wipers, Fans, Seats, etc.

Load Switch – ECU, Chassis, Body

onsemi Type N-Channel MOSFET, 477 A, 60 V Enhancement, 8-Pin DFN

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