製造零件編號

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

RS庫存編號:: 184-4217
製造零件編號:: FDMA2002NZ
製造商:: onsemi

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD28,200.00

(不含稅)

TWD29,610.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月26日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 3000	TWD9.40	TWD28,200.00
6000 +	TWD9.20	TWD27,600.00

* 參考價格

RS庫存編號:: 184-4217
製造零件編號:: FDMA2002NZ
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	WDFN
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	268mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.5W
	Typical Gate Charge Qg @ Vgs	2.4nC
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	0.9V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	0.75mm
	Standards/Approvals	No
	Length	2mm
	Width	2 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type WDFN
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 268mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.5W
	Typical Gate Charge Qg @ Vgs 2.4nC
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf 0.9V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 0.75mm
	Standards/Approvals No
	Length 2mm
	Width 2 mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet FDMA2002NZ

COO (Country of Origin):: TH

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

2.9 A, 30 V

RDS(ON) = 123 mΩ @ VGS = 4.5 V

RDS(ON) = 140 mΩ @ VGS = 3.0 V

RDS(ON) = 163 mΩ @ VGS = 2.5 V

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level=1.8kV (Note 3)

Free from halogenated compounds and antimony oxides

Applications

This product is general usage and suitable for many different applications

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

訂單超過 $1,300.00 免費送貨

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