ROHM Single RUF025N02 1 N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-323 RUF025N02TL
- RS庫存編號:
- 183-5146
- 製造零件編號:
- RUF025N02TL
- 製造商:
- ROHM
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- RS庫存編號:
- 183-5146
- 製造零件編號:
- RUF025N02TL
- 製造商:
- ROHM
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Transistor Configuration | Single | |
| Series | RUF025N02 | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 2.5 A | |
| Maximum Drain Source Voltage (Vds) | 20 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | SOT-323 | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 820 μm | |
| Length | 2.1 mm | |
| Maximum Drain Source Resistance (Rds) | 160 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 10 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 800 mW | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Width | 1.8 mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Transistor Configuration Single | ||
Series RUF025N02 | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 2.5 A | ||
Maximum Drain Source Voltage (Vds) 20 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type SOT-323 | ||
Forward Voltage (Vf) 1.2 V | ||
Height 820 μm | ||
Length 2.1 mm | ||
Maximum Drain Source Resistance (Rds) 160 mΩ | ||
Maximum Gate Source Voltage (Vgs) 10 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 800 mW | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Width 1.8 mm | ||
- COO (Country of Origin):
- JP
Power MOSFETs are MADE as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering Compact types, high-power types and complex types to meet various needs in the market.
Low voltage(1.5V) drive type
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free
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