DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN DMT6018LDR-13
- RS庫存編號:
- 182-7493
- 製造零件編號:
- DMT6018LDR-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD225.00
(不含稅)
TWD236.20
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 2490 | TWD22.50 | TWD225.00 |
| 2500 - 4990 | TWD22.00 | TWD220.00 |
| 5000 + | TWD21.70 | TWD217.00 |
* 參考價格
- RS庫存編號:
- 182-7493
- 製造零件編號:
- DMT6018LDR-13
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Power Dissipation Pd | 1.9W | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.75V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 0.8mm | |
| Width | 3.05 mm | |
| Length | 3.05mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Power Dissipation Pd 1.9W | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.75V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 0.8mm | ||
Width 3.05 mm | ||
Length 3.05mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch
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