DiodesZetex Dual 2 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin PowerDI5060-8 DMT69M9LPDW-13
- RS庫存編號:
- 246-7559
- 製造零件編號:
- DMT69M9LPDW-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD195.00
(不含稅)
TWD204.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD19.50 | TWD195.00 |
| 50 - 90 | TWD19.00 | TWD190.00 |
| 100 - 240 | TWD18.50 | TWD185.00 |
| 250 - 990 | TWD18.00 | TWD180.00 |
| 1000 + | TWD17.60 | TWD176.00 |
* 參考價格
- RS庫存編號:
- 246-7559
- 製造零件編號:
- DMT69M9LPDW-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0168Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 33.5nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0168Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 33.5nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 60 V and maximum gate to source voltage is ±16 V It offers low on-resistance and fast switching speed It offers a wettable flank for improved optical inspection Thermally efficient package ideal for cooler running applications
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