DiodesZetex DMN6040SE Type N-Channel MOSFET, 7.1 A, 60 V Enhancement, 4-Pin SOT-223 DMN6040SE-13
- RS庫存編號:
- 182-7066
- 製造零件編號:
- DMN6040SE-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD200.00
(不含稅)
TWD210.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年1月05日 起發貨
- 加上 850 件從 2026年1月12日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 975 | TWD8.00 | TWD200.00 |
| 1000 - 1975 | TWD7.70 | TWD192.50 |
| 2000 + | TWD7.60 | TWD190.00 |
* 參考價格
- RS庫存編號:
- 182-7066
- 製造零件編號:
- DMN6040SE-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | DMN6040SE | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.55mm | |
| Height | 1.65mm | |
| Width | 3.55 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series DMN6040SE | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.55mm | ||
Height 1.65mm | ||
Width 3.55 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Transformer Driving Switch
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
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