DiodesZetex Dual 2 Type N-Channel Power MOSFET, 33.2 A, 60 V Enhancement, 8-Pin PowerDI5060
- RS庫存編號:
- 182-6944
- 製造零件編號:
- DMTH6016LPD-13
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 2500 件)*
TWD42,000.00
(不含稅)
TWD44,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月04日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD16.80 | TWD42,000.00 |
| 5000 + | TWD16.30 | TWD40,750.00 |
* 參考價格
- RS庫存編號:
- 182-6944
- 製造零件編號:
- DMTH6016LPD-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 37.5W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Length | 5.85mm | |
| Width | 4.95 mm | |
| Height | 1.05mm | |
| Standards/Approvals | AEC-Q101, J-STD-020, RoHS, UL 94V-0, MIL-STD-202 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 37.5W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Length 5.85mm | ||
Width 4.95 mm | ||
Height 1.05mm | ||
Standards/Approvals AEC-Q101, J-STD-020, RoHS, UL 94V-0, MIL-STD-202 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it deal for high-efficiency power management applications.
Rated to +175° C – Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. Green Device.
Engine Management Systems
Body Control Electronics
DCDC Converters
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