DiodesZetex DMP Type P-Channel MOSFET, 0.25 A, 450 V Enhancement, 4-Pin SOT-223
- RS庫存編號:
- 182-6919
- 製造零件編號:
- DMP45H150DHE-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD18,250.00
(不含稅)
TWD19,150.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD7.30 | TWD18,250.00 |
| 5000 + | TWD7.10 | TWD17,750.00 |
* 參考價格
- RS庫存編號:
- 182-6919
- 製造零件編號:
- DMP45H150DHE-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.25A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Series | DMP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Maximum Power Dissipation Pd | 59.4W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.55mm | |
| Height | 1.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.25A | ||
Maximum Drain Source Voltage Vds 450V | ||
Series DMP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Maximum Power Dissipation Pd 59.4W | ||
Maximum Operating Temperature 150°C | ||
Length 6.55mm | ||
Height 1.65mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- COO (Country of Origin):
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
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