onsemi FDPF Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220 FDPF4D5N10C
- RS庫存編號:
- 181-1917
- 製造零件編號:
- FDPF4D5N10C
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD351.00
(不含稅)
TWD368.56
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 564 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 248 | TWD175.50 | TWD351.00 |
| 250 - 498 | TWD171.50 | TWD343.00 |
| 500 + | TWD169.00 | TWD338.00 |
* 參考價格
- RS庫存編號:
- 181-1917
- 製造零件編號:
- FDPF4D5N10C
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | FDPF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 37.5W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 16.07mm | |
| Width | 4.9 mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series FDPF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 37.5W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 16.07mm | ||
Width 4.9 mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 48nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter
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