onsemi FDPF Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDPF2D3N10C

RS庫存編號:: 181-1911
製造零件編號:: FDPF2D3N10C
製造商:: onsemi

onsemi FDPF Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDPF2D3N10C

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可享批量折扣

小計（1 包，共 2 件）*

TWD416.00

(不含稅)

TWD436.80

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 172 個，準備發貨

單位	每單位	每包*
2 - 248	TWD208.00	TWD416.00
250 - 498	TWD203.00	TWD406.00
500 +	TWD200.50	TWD401.00

* 參考價格

RS庫存編號:: 181-1911
製造零件編號:: FDPF2D3N10C
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	222A
	Maximum Drain Source Voltage Vds	100V
	Series	FDPF
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	108nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	45W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.36mm
	Width	4.9 mm
	Standards/Approvals	No
	Height	16.07mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 222A
	Maximum Drain Source Voltage Vds 100V
	Series FDPF
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 108nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 45W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.36mm
	Width 4.9 mm
	Standards/Approvals No
	Height 16.07mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A

Power Density & Shielded Gate

High Performance Trench Technology for Extremely Low RDS(on)

High power density with Shielded gate technology

Extremely Low Reverse Recovery Charge, Qrr

Low Vds spike internal snubber function.

Low Gate Charge, QG = 108nC (Typ.)

Low switching loss

High Power and Current Handling Capability

Low Qrr/Trr

Soft recovery performance

Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

Server

Telecom

Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)

Motor Drive

Uninterruptible Power Supplies

onsemi FDPF Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDPF2D3N10C

訂單超過 $1,300.00 免費送貨

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