Vishay Single 1 Type N-Channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 IRLL014TRPBF

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包裝方式:
RS庫存編號:
180-8823
製造零件編號:
IRLL014TRPBF
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.2Ω

Typical Gate Charge Qg @ Vgs

8.4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±10 V

Maximum Power Dissipation Pd

3.1W

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Height

1.8mm

Width

3.3 mm

Length

6.3mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, SOT-223-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 200mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 3.1W. It has a minimum and maximum driving voltage of 4V and 5V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Available in tape and reel

• Dynamic dV/dt rating

• Ease of paralleling

• Fast switching

• Halogen and lead (Pb) free component

• Logic-level gate drive

• Operating temperature ranges between -55°C and 150°C

• RDS (on) specified at VGS is 4V and 5V

Applications


• Battery chargers

• Inverters

• Power supplies

• Switching mode power supply (SMPS)

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