Vishay Single 1 Type N-Channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223
- RS庫存編號:
- 180-8362
- 製造零件編號:
- IRLL014TRPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD35,750.00
(不含稅)
TWD37,550.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,500 件從 2026年10月09日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD14.30 | TWD35,750.00 |
| 5000 - 7500 | TWD13.90 | TWD34,750.00 |
| 10000 + | TWD13.50 | TWD33,750.00 |
* 參考價格
- RS庫存編號:
- 180-8362
- 製造零件編號:
- IRLL014TRPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.2Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 6.3mm | |
| Width | 3.3 mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.2Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 6.3mm | ||
Width 3.3 mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, SOT-223-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 200mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 3.1W. It has a minimum and maximum driving voltage of 4V and 5V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Available in tape and reel
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Halogen and lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 150°C
• RDS (on) specified at VGS is 4V and 5V
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
相關連結
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