Vishay Single 1 Type P-Channel MOSFET, -11 A, 100 V TO-220FP
- RS庫存編號:
- 180-8585
- 製造零件編號:
- IRFI9540GPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD527.00
(不含稅)
TWD553.35
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月13日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD105.40 | TWD527.00 |
| 15 - 20 | TWD102.80 | TWD514.00 |
| 25 + | TWD101.20 | TWD506.00 |
* 參考價格
- RS庫存編號:
- 180-8585
- 製造零件編號:
- IRFI9540GPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220FP | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 0.2Ω | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.3 mm | |
| Height | 4.8mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220FP | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 0.2Ω | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Width 10.3 mm | ||
Height 4.8mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFI9540G is a P-channel power MOSFET having drain to source(Vds) voltage of -100V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 0.2ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
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