Vishay Dual TrenchFET 2 N-Channel MOSFET, 500 mA, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3
- RS庫存編號:
- 180-7879P
- 製造零件編號:
- SI1034CX-T1-GE3
- 製造商:
- Vishay
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享受批量購買折扣
額外添加1500件可節省-
查看批量定價選項小計 750 件 (以卷裝提供)*
TWD7,500.00
(不含稅)
TWD7,875.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,750 件從 2026年12月04日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 節省 |
|---|---|---|
| 750 - 1450 | TWD10.00 | - |
| 1500 + | TWD9.90 | - |
* 參考價格
- RS庫存編號:
- 180-7879P
- 製造零件編號:
- SI1034CX-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.396Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 220mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Height | 600μm | |
| Length | 1.7mm | |
| Width | 1.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.396Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 220mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Height 600μm | ||
Length 1.7mm | ||
Width 1.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Vishay MOSFET
The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Gate source ESD protected: 1000V
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Battery powered devices
• Drivers: relays, solenoids, lamps, hammers, displays, memories
• Load/power switching for portable devices
• Power supply converter circuits
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
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