Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 2500 件)*

TWD112,250.00

(不含稅)

TWD117,850.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年9月14日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
2500 - 2500TWD44.90TWD112,250.00
5000 +TWD43.60TWD109,000.00

* 參考價格

RS庫存編號:
180-7296
製造零件編號:
SI4896DY-T1-E3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.5A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.56W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.75mm

Width

6.2 mm

Length

5mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Adaptor switch

• Load switches

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

相關連結