onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23
- RS庫存編號:
- 178-7598
- 製造零件編號:
- NDC7002N
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD13,200.00
(不含稅)
TWD13,860.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD4.40 | TWD13,200.00 |
| 15000 + | TWD4.30 | TWD12,900.00 |
* 參考價格
- RS庫存編號:
- 178-7598
- 製造零件編號:
- NDC7002N
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 510mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Power Dissipation Pd | 960mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 510mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Power Dissipation Pd 960mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相關連結
- onsemi Isolated 2 Type N-Channel Power MOSFET 50 V Enhancement, 6-Pin SOT-23 NDC7002N
- onsemi Isolated 2 Type P 510 mA 6-Pin SOT-23
- onsemi Isolated 2 Type P 510 mA 6-Pin SOT-23 NDC7001C
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23 NDC7003P
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23 FDC6321C
