onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23

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RS庫存編號:
178-7598
製造零件編號:
NDC7002N
製造商:
onsemi
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品牌

onsemi

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

510mA

Maximum Drain Source Voltage Vds

50V

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

1nC

Maximum Power Dissipation Pd

960mW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Width

1.7 mm

Standards/Approvals

No

Height

1mm

Length

3mm

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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