ROHM HP8S36 Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 HP8S36TB

查看所有MOSFETs
可享批量折扣

小計（1 包，共 10 件）*

TWD590.00

(不含稅)

TWD619.50

(含稅)

Add to Basket
選擇或輸入數量
最後的 RS 庫存
  • 最終 330 個，準備發貨
單位
每單位
每包*
10 - 40TWD59.00TWD590.00
50 - 90TWD57.60TWD576.00
100 - 240TWD56.20TWD562.00
250 - 990TWD54.90TWD549.00
1000 +TWD53.50TWD535.00

* 參考價格

RS庫存編號:
178-5992
製造零件編號:
HP8S36TB
製造商:
ROHM
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

ROHM

Channel Type

N

Maximum Continuous Drain Current

27 A, 80 A

Maximum Drain Source Voltage

30 V

Package Type

HSOP8

Series

HP8S36

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

22 W, 29 W

Maximum Gate Source Voltage

±128 V, ±20 V

Number of Elements per Chip

2

Width

5.8mm

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)

Height

1.1mm

Minimum Operating Temperature

-55 °C

不適用

COO (Country of Origin):
TH
HP8S36 is low on-resistance MOSFET for switching application.

Low on - resistance
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)

相關連結