ROHM SH8M24GZE Dual N/P-Channel MOSFET, 6 A, 45 V, 8-Pin SOP SH8M24GZETB

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RS庫存編號:
171-9905
製造零件編號:
SH8M24GZETB
製造商:
ROHM
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品牌

ROHM

Channel Type

N, P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

45 V

Package Type

SOP

Series

SH8M24GZE

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (N Channel) V, 2.5 (P Channel) V

Minimum Gate Threshold Voltage

1 (N Channel) V, 1 (P Channel) V

Maximum Power Dissipation

3.1 W

Maximum Gate Source Voltage

±20 V

Width

4.05mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

5.2mm

Typical Gate Charge @ Vgs

13 nC @ 5 V (P Channel), 6.8 nC @ 5 V (N Channel)

Height

1.6mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
JP
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

4V-drive type
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free

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