onsemi Dual 2 Type N-Channel Power MOSFET, 127 A, 40 V Enhancement, 8-Pin DFN NVMFD5C446NT1G

此圖片僅供參考,請參閲產品詳細資訊及規格

供應短缺
由於全球供應短缺,我們不知道何時會到貨。
包裝方式:

替代產品

該產品我們目前不提供。 這是我們推薦的替代產品。

個 (在毎卷:1500)

TWD76.90

(不含稅)

TWD80.74

(含稅)

RS庫存編號:
178-4437
製造零件編號:
NVMFD5C446NT1G
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

127A

Maximum Drain Source Voltage Vds

40V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

38nC

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

89W

Minimum Operating Temperature

175°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

-55°C

Transistor Configuration

Dual

Length

5.1mm

Height

1.05mm

Width

6.1 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.

Features

Low on resistance

High current capability

PPAP capable

NVMFD5C446NWF - Wettable Flank Option

Benefits

Minimal conduction losses

Robust load performance

Safeguard against voltage overstress failures

Suitable for automotive applications

Enhanced Optical Inspection

Applications

Solenoid driver

Low side / high side driver

End Products

Automotive engine controllers

Antilock braking systems

相關連結