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選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	111A
	Maximum Drain Source Voltage Vds	60V
	Series	NVMFD5C650NL
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	16nC
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.1mm
	Height	1.05mm
	Width	5.1 mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 111A
	Maximum Drain Source Voltage Vds 60V
	Series NVMFD5C650NL
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 16nC
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.1mm
	Height 1.05mm
	Width 5.1 mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low rDS(on)

Minimize Conduction Loss

Low QG and Capacitance

Minimize Driver Losses

NVMFD5C446NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Applications

Solenoid driver

Low side / high side driver

Automotive engine controllers

Antilock braking systems

onsemi Dual NVMFD5C650NL 2 Type N-Channel MOSFET, 111 A, 60 V Enhancement, 8-Pin DFN

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