Microchip TN2106 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92
- RS庫存編號:
- 177-9850P
- 製造零件編號:
- TN2106N3-G
- 製造商:
- Microchip
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 260 件 (以袋裝提供)*
TWD5,590.00
(不含稅)
TWD5,870.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 820 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 260 - 480 | TWD21.50 |
| 500 + | TWD21.20 |
* 參考價格
- RS庫存編號:
- 177-9850P
- 製造零件編號:
- TN2106N3-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | TN2106 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 740mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.06mm | |
| Height | 5.33mm | |
| Length | 5.08mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series TN2106 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 740mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.06mm | ||
Height 5.33mm | ||
Length 5.08mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
相關連結
- EOZ Push Button Switch Panel Mount SPST 250V ac, IP65
- Vishay LH1511BT Series Solid State Relay PCB Mount, 200 V ac/dc Load
- Jumo diraTRON Panel Mount PID Temperature Controller 3 Output 2 Relay 110 → 240 V
- Fluke 179 Handheld Digital Multimeter 10A ac Max 1000V ac Max
- Honeywell Amplified Airflow Sensor AWM3000 Series
- Amphenol Industrial Pin Contacts Screw
- Festo Compressed Air Pipe Blue Polyurethane 6mm x 50m PUN Series, 159664
- Portescap Brushless DC Motor 15 V dc 9300 rpm, 3mm Shaft Diameter