Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23

RS庫存編號:: 177-9691
製造零件編號:: TN2106K1-G
製造商:: Microchip

Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD45,000.00

(不含稅)

TWD47,250.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年2月19日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD15.00	TWD45,000.00
15000 +	TWD13.50	TWD40,500.00

* 參考價格

RS庫存編號:: 177-9691
製造零件編號:: TN2106K1-G
製造商:: Microchip

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	280mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	TN2106
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	360mW
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.4 mm
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 280mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series TN2106
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 360mW
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.4 mm
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Datasheet

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

相關連結