Microchip DN2540 Type N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243
- RS庫存編號:
- 177-3294P
- 製造零件編號:
- DN2540N8-G
- 製造商:
- Microchip
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可享批量折扣
查看批量定價選項小計 500 件 (以卷裝提供)*
TWD17,600.00
(不含稅)
TWD18,480.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,510 件從 2026年9月07日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 500 - 990 | TWD35.20 |
| 1000 + | TWD34.30 |
* 參考價格
- RS庫存編號:
- 177-3294P
- 製造零件編號:
- DN2540N8-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | DN2540 | |
| Package Type | TO-243 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Width | 2.6mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Series DN2540 | ||
Package Type TO-243 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Width 2.6mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features:
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown Low input and output leakage
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