onsemi Single SiC Power Module, 28 A, 3-Pin TO-220 FFSP3065A
- RS庫存編號:
- 172-8971
- 製造零件編號:
- FFSP3065A
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD468.00
(不含稅)
TWD491.40
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 198 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD234.00 | TWD468.00 |
| 200 - 398 | TWD229.50 | TWD459.00 |
| 400 + | TWD226.50 | TWD453.00 |
* 參考價格
- RS庫存編號:
- 172-8971
- 製造零件編號:
- FFSP3065A
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 28A | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Height | 16.51mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 28A | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Height 16.51mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.
Features and Benefits
• Avalanche rated 180mJ
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
Applications
• EV charger
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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