Infineon IPB64N25S3-20 N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 171-1959P
- 製造零件編號:
- IPB64N25S320ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 250 件 (以卷裝提供)*
TWD67,600.00
(不含稅)
TWD70,980.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 250 - 495 | TWD270.40 |
| 500 + | TWD253.20 |
* 參考價格
- RS庫存編號:
- 171-1959P
- 製造零件編號:
- IPB64N25S320ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | IPB64N25S3-20 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Width | 10.25mm | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Automotive Standard | AEC | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series IPB64N25S3-20 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Width 10.25mm | ||
Standards/Approvals No | ||
Length 10mm | ||
Automotive Standard AEC | ||
Infineon IPB64N25S3-20 Series MOSFET, 250V Maximum Drain Source Voltage, 64A Maximum Continuous Drain Current - IPB64N25S320ATMA1
This MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in demanding electronic systems. It operates across a very wide temperature span and is built for surface-mount deployment in a TO-263 package, making it suitable for compact assemblies where robust power handling is required.
Features and Benefits:
• 250V drain rating enables high-voltage switching capability
• 64A continuous drain current supports heavy current loads
• 20mΩ Rds(on) minimises conduction losses during operation
• 300W power dissipation allows sustained thermal loading
• 67nC typical gate charge ensures predictable switching behaviour
• 20V gate voltage rating maintains safe gate-drive margins
• 64A continuous drain current supports heavy current loads
• 20mΩ Rds(on) minimises conduction losses during operation
• 300W power dissipation allows sustained thermal loading
• 67nC typical gate charge ensures predictable switching behaviour
• 20V gate voltage rating maintains safe gate-drive margins
Applications
• Ideal for automotive power-conversion modules
• Suitable for high-current DC-DC converters
• Used with motor-drive inverter stages
• Can be used for server and telecoms power supplies
• Suitable for high-temperature industrial electronics
• Suitable for high-current DC-DC converters
• Used with motor-drive inverter stages
• Can be used for server and telecoms power supplies
• Suitable for high-temperature industrial electronics
What thermal range can this device tolerate in harsh environments?
It functions across -55°C to 175°C ambient endpoints, allowing use in extreme-temperature applications and reducing the need for extensive thermal protection.
How does the package influence PCB assembly and cooling?
The TO-263 surface-mount form factor provides a low-profile mounting option and presents a large thermal pad for heat transfer to heatsinks or copper pours on the PCB.
What gate-drive considerations are required for reliable switching?
A gate-source rating of 20V sets the maximum permissible gate drive
designers should select gate voltages within this limit and account for the 67nC gate charge when sizing drivers.
How does the device type affect circuit topology choices?
As an enhancement-mode N-channel MOSFET, it needs a positive gate drive relative to the source for conduction, making it appropriate for low-side switching and synchronous rectification arrangements.
相關連結
- EOZ Push Button Switch Panel Mount SPST 250V ac, IP65
- Portescap Brushless DC Motor 15 V dc 9300 rpm, 3mm Shaft Diameter
- Festo Compressed Air Pipe Blue Polyurethane 6mm x 50m PUN Series, 159664
- Fluke 179 Handheld Digital Multimeter 10A ac Max 1000V ac Max
- Vishay LH1511BT Series Solid State Relay PCB Mount, 200 V ac/dc Load
- Jumo diraTRON Panel Mount PID Temperature Controller 3 Output 2 Relay 110 → 240 V
- Amphenol Industrial Pin Contacts Screw
- Honeywell Amplified Airflow Sensor AWM3000 Series