Infineon IPB64N25S3-20 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263 IPB64N25S320ATMA1
- RS庫存編號:
- 171-1959
- 製造零件編號:
- IPB64N25S320ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD730.00
(不含稅)
TWD766.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 35 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 245 | TWD146.00 | TWD730.00 |
| 250 - 495 | TWD142.20 | TWD711.00 |
| 500 + | TWD133.20 | TWD666.00 |
* 參考價格
- RS庫存編號:
- 171-1959
- 製造零件編號:
- IPB64N25S320ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | IPB64N25S3-20 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Width | 10.25 mm | |
| Height | 4.4mm | |
| Automotive Standard | AEC | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series IPB64N25S3-20 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10mm | ||
Width 10.25 mm | ||
Height 4.4mm | ||
Automotive Standard AEC | ||
The Infineon IPB64N25S3-20 is the 250V, N-channel automotive MOSFET. The package type of the device is the D2PAK 3pin and 175°C operating temperature.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C Peak reflow
相關連結
- Infineon IPB64N25S3-20 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IPB200N25N3GATMA1
- Infineon IMBG Type N-Channel MOSFET 75 V Enhancement, 7-Pin TO-263-7
- Infineon IMBG Type N-Channel MOSFET 75 V Enhancement, 7-Pin TO-263-7 IMBG65R039M1HXTMA1
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 AUIRFS8407TRL
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IRFS7437TRLPBF