Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252 IPD053N08N3GATMA1
- RS庫存編號:
- 171-1937
- 製造零件編號:
- IPD053N08N3GATMA1
- 製造商:
- Infineon
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TWD719.00
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TWD755.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 8,580 件從 2026年8月03日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD71.90 | TWD719.00 |
| 630 - 1240 | TWD70.10 | TWD701.00 |
| 1250 + | TWD65.60 | TWD656.00 |
* 參考價格
- RS庫存編號:
- 171-1937
- 製造零件編號:
- IPD053N08N3GATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | IPD053N08N3 G | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series IPD053N08N3 G | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
不適用
Infineon MOSFET
The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 5.3mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET tackles the most challenging applications giving full flexibility in limited spaces. It is designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dual sided cooling
• Excellent gate charge x RDS (ON) product (FOM)
• Lead (Pb) free plating
• Low parasitic inductance
• Low profile (<0, 7mm)
• Operating temperature ranges between -55°C and 175°C
• Optimized technology for DC-DC converters
• Superior thermal resistance
Applications
• AC-DC
• Adapter
• DC-DC
• LED
• Motor control
• PC power
• Server power supplies
• SMPS
• Solar
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
相關連結
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