Nexperia PMV30UN2 Type N-Channel MOSFET, 5.4 A, 20 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 170-4846
- 製造零件編號:
- PMV30UN2R
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD9,900.00
(不含稅)
TWD10,380.00
(含稅)
添加 3000 件 件可免費送貨
暫時缺貨
- 從 2026年8月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD3.30 | TWD9,900.00 |
| 6000 + | TWD3.20 | TWD9,600.00 |
* 參考價格
- RS庫存編號:
- 170-4846
- 製造零件編號:
- PMV30UN2R
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PMV30UN2 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PMV30UN2 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1000 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
相關連結
- Nexperia PMV30UN2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 PMV30UN2R
- DiodesZetex DMN3069L Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN3069L Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMN3069L-7
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23