Infineon IPP075N15N3 G Type N-Channel MOSFET, 100 A, 150 V Enhancement, 4-Pin TO-220
- RS庫存編號:
- 170-2323
- 製造零件編號:
- IPP075N15N3GXKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD236.00
(不含稅)
TWD247.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 32 件從 2026年1月02日 起裝運發貨
- 加上 500 件從 2026年3月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD118.00 | TWD236.00 |
| 14 + | TWD109.00 | TWD218.00 |
* 參考價格
- RS庫存編號:
- 170-2323
- 製造零件編號:
- IPP075N15N3GXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | IPP075N15N3 G | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 11.17mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series IPP075N15N3 G | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 11.17mm | ||
Automotive Standard No | ||
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
Summary of Features:
Excellent switching performance
Worlds lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Halogen free
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Target Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
相關連結
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
