Infineon HEXFET Type N-Channel MOSFET, 104 A, 150 V Enhancement, 3-Pin TO-220

RS庫存編號:: 124-9005
製造零件編號:: IRFB4115PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 104 A, 150 V Enhancement, 3-Pin TO-220

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可享批量折扣

小計（1 管，共 50 件）*

TWD2,720.00

(不含稅)

TWD2,856.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 1,000 件從 2025年12月29日起發貨

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單位	每單位	每管*
50 - 50	TWD54.40	TWD2,720.00
100 - 150	TWD53.20	TWD2,660.00
200 +	TWD49.40	TWD2,470.00

* 參考價格

RS庫存編號:: 124-9005
製造零件編號:: IRFB4115PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	11mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	380W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	77nC
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	9.02mm
	Width	4.83 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 11mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 380W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 77nC
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 9.02mm
	Width 4.83 mm
	Automotive Standard No

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COO (Country of Origin):: MX

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