Infineon HEXFET Type N-Channel MOSFET, 104 A, 150 V Enhancement, 3-Pin TO-220

This MOSFET is a high-power N-channel enhancement device designed for switching and power-conversion tasks in demanding electronic systems. It operates across a wide thermal range suitable for challenging environments and is supplied in a through-hole TO-220 package for straightforward heatsinking and assembly. The device delivers substantial continuous drain current capability and is intended for applications requiring efficient high-current handling and rapid switching performance.

• 150V maximum drain voltage enables high-voltage switching
• 104A continuous drain current supports heavy load handling
• 11 mΩ low RDS(on) minimises conduction losses at high current
• 380W power dissipation allows sustained thermal load
• 77 nC typical gate charge enables fast switching transitions
• 1.3V forward voltage reduces diode conduction drop

• Suitable for Infineon HEXFET 150V MOSFET TO-220 motor drivers
• Ideal for 150V 104A MOSFETs for switch-mode power supplies
• Used with high-power N-channel enhancement MOSFET circuits
• Can be used for TO-220 through-hole MOSFET 380W power stages

The gate-to-source rating is ±20V, so drive circuits must keep VGS within that range to avoid gate damage.

It is specified to operate from -55 °C to 175 °C, ensuring electrical characteristics are maintained across those ambient and junction conditions.

The component has three pins and is intended for through-hole mounting in a TO-220 format to facilitate secure heatsink attachment.

It is an N-channel device operating in enhancement mode, requiring a positive gate relative to source to turn on.