STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 30 A, 710 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 168-7620
- 製造零件編號:
- STW38N65M5
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD5,802.00
(不含稅)
TWD6,092.10
(含稅)
庫存資訊目前無法查詢
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD193.40 | TWD5,802.00 |
| 60 + | TWD189.30 | TWD5,679.00 |
* 參考價格
- RS庫存編號:
- 168-7620
- 製造零件編號:
- STW38N65M5
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-247 | |
| Series | MDmesh M5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-247 | ||
Series MDmesh M5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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