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N-Channel MOSFET, 70 A, 500 V, 3-Pin ISOPLUS264 IXYS IXFL100N50P
RS庫存編號:
168-4575
製造零件編號:
IXFL100N50P
製造商:
IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
當前暫無庫存,可於06/06/2025發貨,6 工作日送達。
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單價(不含稅) 毎管:25 個
TWD958.50
(不含稅)
TWD1,006.42
(含稅)
單位
每單位
Per Tube*
25 - 100
TWD958.50
TWD23,962.50
125 +
TWD862.60
TWD21,565.00
* 參考價格
RS庫存編號:
168-4575
製造零件編號:
IXFL100N50P
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
IXFL 100N50P, PolarHV HiPerFET Power MOSFET 500V 70A ISOPLUS264
ESD Control Selection Guide V1
相容
符合聲明
N-Channel Power MOSFET, IXYS HiperFET PolarHV Series
A range of IXYS PolarHV™ series N-channel Enhancement mode Power MOSFET with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
500 V
Package Type
ISOPLUS264
Series
PolarHVTM HiPerFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
240 nC @ 10 V
Length
20.29mm
Width
5.21mm
Number of Elements per Chip
1
Height
26.42mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V