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N-Channel MOSFET, 70 A, 300 V, 3-Pin ISOPLUS247 IXYS IXFR140N30P
RS庫存編號:
168-4581
製造零件編號:
IXFR140N30P
製造商:
IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
當前暫無庫存,可於06/06/2025發貨,6 工作日送達。
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單位
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添加到收藏夾
單價(不含稅) 毎管:30 個
TWD676.70
(不含稅)
TWD710.54
(含稅)
單位
每單位
Per Tube*
30 - 30
TWD676.70
TWD20,301.00
60 +
TWD662.00
TWD19,860.00
* 參考價格
RS庫存編號:
168-4581
製造零件編號:
IXFR140N30P
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
IXFR140N30P, Polar Power MOSFET HiPerFET 300V 70A ISOPLUS247
ESD Control Selection Guide V1
相容
符合聲明
COO (Country of Origin):
PH
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
300 V
Series
Polar HiPerFET
Package Type
ISOPLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
300 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
185 nC @ 10 V
Length
16.13mm
Maximum Operating Temperature
+150 °C
Width
5.21mm
Height
21.34mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V