製造零件編號

Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin SOT-669

RS庫存編號:: 166-0113
製造零件編號:: PSMN1R7-30YL,115
製造商:: Nexperia

Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin SOT-669

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1500 件）*

TWD45,600.00

(不含稅)

TWD47,880.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月09日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1500 - 6000	TWD30.40	TWD45,600.00
7500 +	TWD29.20	TWD43,800.00

* 參考價格

RS庫存編號:: 166-0113
製造零件編號:: PSMN1R7-30YL,115
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-669
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	2.4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	77.9nC
	Maximum Power Dissipation Pd	109W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.1 mm
	Height	1.1mm
	Length	5mm
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-669
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 2.4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 77.9nC
	Maximum Power Dissipation Pd 109W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.1 mm
	Height 1.1mm
	Length 5mm
	Automotive Standard No

COO (Country of Origin):: PH

Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin SOT-669

訂單超過 $1,300.00 免費送貨

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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