Microchip DN3135 Type N-Channel MOSFET, 135 mA, 350 V Depletion, 3-Pin SOT-23
- RS庫存編號:
- 165-6450P
- 製造零件編號:
- DN3135K1-G
- 製造商:
- Microchip
此圖片僅供參考，請參閲產品詳細資訊及規格
小計 25 件 (按連續帶提供)*
TWD467.50
(不含稅)
TWD491.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 10,550 個，準備發貨
單位 | 每單位 |
|---|---|
| 25 + | TWD18.70 |
* 參考價格
- RS庫存編號:
- 165-6450P
- 製造零件編號:
- DN3135K1-G
- 製造商:
- Microchip
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135mA | |
| Maximum Drain Source Voltage Vds | 350V | |
| Package Type | SOT-23 | |
| Series | DN3135 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135mA | ||
Maximum Drain Source Voltage Vds 350V | ||
Package Type SOT-23 | ||
Series DN3135 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an Advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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